current position:Information and data>Tungsten target High purity tungsten target
1. Purity: 99.95%; 99.99%; 99.999%
2. Density: ≥19.1g/cm3;
3. Flatness: ≤2%;
use:
High-purity tungsten targets, high-purity tungsten-titanium alloy targets, and tungsten-silicon composite targets are usually applied by magnetron sputtering to produce various complex and high-performance thin film materials. Because high-purity tungsten or ultra-pure tungsten (5 N or 6 N) has high resistance to electron migration, high temperature stability, and the ability to form stable silicides, it is often used as a thin film in the electronics industry as a gate, connection, transition and Barrier metal. Ultra-high-purity tungsten and its silicides are also used in ultra-large-scale integrated circuits as resistance layers, diffusion barriers, etc., and as gate materials and connection materials in metal oxide semiconductor transistors. Tungsten-titanium alloy sputtering targets are often used to make transition metal layers of thin-film solar cells.
Depending on the purpose of use, there are different requirements for the impurity content of the high-purity tungsten target and the tungsten-titanium target. Generally, the chemical purity is required to be between 99.99% and 99.999%. We can also customize other specifications suitable for the application according to user requirements.
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