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  With the new two-dimensional semiconductor materials, such as graphene, molybdenum disulfide (MoS2), tungsten diselenate (WSe2) in the field of nano-electronic devices continue to promote the use of two-dimensional material within the charge capture process gradually more attention The People on the one hand for this charge capture process will affect the reliability of the device itself and worry about, on the other hand is also constantly exploring whether the two-dimensional material to the internal characteristics of the use, to create a new multi-bit storage devices Or analog adjustable memory.







  For this problem, Professor Liang Xiaogan of the University of Michigan recently studied the abnormal charge trapping and memory properties of multilayer tungsten selenide (WSe2) transistors. This work shows that they can excite multiple charge traces with large intervals, long hold times.

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